Abstract
InGaP/InGaAs pseudomorphic high electron mobility transistors (PHEMTs) fabricated using single-gate and dual-gate methodologies have been characterized with special emphasis to precisely control the device linearity and the gate-voltage swing. The key features of the proposed PHEMT profile are characterized in a composite channel by using a GaAs delta sheet and an undoped InGaAs layer. The gate voltage dependence of transconductance for the first equivalent gate with several V/sub gs2/ shows that the gate voltage swing available is in the range of 0 to 4.5 V.
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