Abstract
This work presents the structure Junctionless Fin-FET(JL-FinFET) based on ultra-thin body (UTB) with nickel silicide. The experiment will show the structure between silicide and non-silicide junctionless Fin-FET. The experiment results show superior performance including steep sub-threshold swing (SS) of 103 mV/dec and Ion/Ioff ratio (>105).The simulation results show that the nanowire junctionless field-effect transistor with silicide has better drain current than non-silicide. Both experimental and simulation results show that the silicide sample has two times of Ion value comparing to non-silicide sample.
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