High-frequency response and the possibilities of frequency-tunable narrow-band terahertz amplification in resonant tunneling nanostructures

Abstract

The characteristics of the high-frequency response of single- and double-well resonant tunneling structures in a dc electric field are investigated on the basis of the numerical solution of a time-dependent Schrodinger equation with open boundary conditions. The frequency dependence of the real part of high frequency conductivity (high-frequency response) in In0.53Ga0.47As/AlAs/InP structures is analyzed in detail for various values of the dc voltage V dc in the negative differential resistance (NDR) region. It is shown that double-well three-barrier structures are promising for the design of terahertz-band oscillators. The presence of two resonant states with close energies in such structures leads to a resonant (in frequency) response whose frequency is determined by the energy difference between these levels and can be controlled by varying the parameters of the structure. It is shown that, in principle, such structures admit narrow-band amplification, tuning of the amplification frequency, and a fine control of the amplification (oscillation) frequency in a wide range of terahertz frequencies by varying a dc electric voltage applied to the structure. Starting from a certain width of the central intermediate barrier in double-well structures, one can observe a collapse of resonances, where the structure behaves like a single-well system. This phenomenon imposes a lower limit on the oscillation frequency in three-barrier resonant tunneling structures.