High-fidelity ac gate operations of a three-electron double quantum dot qubit

Abstract

Semiconductor quantum dots in silicon are promising qubits because of long spin coherence times and their potential for scalability. However, such qubits with complete electrical control and fidelities above the threshold for quantum error correction have not yet been achieved. We show theoretically that the threshold fidelity can be achieved with ac gate operation of the quantum dot hybrid qubit. Formed by three electrons in a double dot, this qubit is electrically controlled, does not require magnetic fields, and runs at GHz gate speeds. We analyze the decoherence caused by 1/f charge noise in this qubit, find the parameter regime for tunnel couplings and detuning that minimize the charge noise dependence in the qubit frequency, and determine the optimal working points for ac gate operations that drive the detuning and tunnel coupling.