Abstract
Silicon nitride (Si3N4) grown by metalorganic chemical vapor deposition on Si was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of Si3N4 obtained using monochromatic Ga Kα radiation at 9252.13 eV include a survey scan and high-resolution spectra of Si 1s, Si 2p, N 1s, and O 1s.
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