Abstract
Silicon oxide (SiO2) grown by rapid thermal oxidation (RTO) was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of SiO2 obtained using monochromatic Ga Kα radiation at 9252.13 eV include a survey scan and high-resolution spectra of Si 1s, Si 2p, O 1s, and C 1s.
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