Abstract
The carbon-doping behaviors of carbon tetrabromide (CBr4) in AlxGa1−xAs material system are studied by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Doping level dependence on growth temperature, and V/III ratio is established. C-doped InGaAs/AlGaAs/GaAs separate confinement laser structure (∼940nm) are grown and demonstrated high quality with low-threshold current density. High-performance monolithic laser diode arrays are fabricated. A high slope efficiency of 1.17W/A and power efficiency of 62% are achieved, which is much better than the performance of Zn-doped structure of the same design. Therefore, carbon doping is demonstrated to have unique advantages over Zn-doping for high-power semiconductor laser applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
