High-efficiency GaAs solar cells grown on passive-Ge substrates by atmospheric pressure OMVPE

J.C Chen,M.L Ristow,J.I Cubbage,J.G Werthen

doi:10.1109/pvsc.1991.169196

High-efficiency GaAs solar cells grown on passive-Ge substrates by atmospheric pressure OMVPE

J.C Chen, M.L Ristow + Show 2 more

https://doi.org/10.1109/pvsc.1991.169196

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Publication Date: Oct 7, 1991

Citations: 3

Affiliation: University of Maryland, Baltimore

#Atmospheric Pressure OMVPE #GaAs Solar Cells + Show 8 more

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Abstract

High-efficiency (up to 19%, AM0) GaAs solar cells on passive-Ge substrates have been grown by an atmospheric pressure OMVPE. A systematic study was carried out to find the optimum growth conditions. Results indicate that only a narrow temperature window (600-630 degrees C) for the initial layer growth will give the passive-Ge junction together with good GaAs solar cells. >

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