Abstract
A p/n GaAs solar cell with 24.0% efficiency under 1-sun global illumination (AM1.5, 1000 W/m/sup 2/) has been grown in a multiwafer organometallic vapor-phase epitaxy (OMVPE) reactor. This reactor has demonstrated good uniformity both from run to run and within a single run as part of a pilot line for the batch production of high-efficiency GaAs cells. The 24% efficiency value represents the highest efficiency reported to date for any solar cell under these conditions. The improved performance of these cells is believed to be mostly due to careful control of the emitter doping.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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