High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth

Abstract

The high-efficiency conversion of threading screw dislocations (TSDs) in 4H-SiC by solution growth provides an efficient method of obtaining ultra high-quality SiC crystals. The behavior of TSDs on on-axis and off-axis 4H-SiC0001 seed crystals was investigated by synchrotron X-ray topography. Almost all TSDs in the off-axis Si-face seed crystal were converted to Frank-type stacking faults on the basal planes. The conversion ratio of TSDs was highly influenced by the surface polarity of the seed crystal. The stacking faults laterally propagate toward the outside of the crystal.