Abstract
Abstract : This program was designed to improve the reliability and performance of electrical power systems and components, while reducing operational life cycle costs for a wide variety of aircraft and space electrical power-system generation, conditioning, and utilization equipment applications. To achieve these objectives, research efforts were conducted for the advancement of silicon carbide (SiC) power device technology in the technical areas of advanced design, manufacturability, and component reliability. This delivery order was successful in developing of a normally off enhancement mode vertical junction field effect transistor (VJFET) switch that is capable of blocking 600V-1200V with a zero voltage gate bias. These devices were shown to operate and maintain blocking voltage up to 200 C, and could be used as a high temperature and harsh-environment capable transistor technology. Reliability of the VJFET device was also investigated showing excellent stability after initial infant mortality issues were screened.
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