Abstract
Al0.66In0.34As0.85Sb0.15/In0.75Ga0.25As/InP heterostructure field-effect transistors (HFETs) with high breakdown voltage have been successfully fabricated by low-pressure metal organic chemical vapour deposition (LP-MOCVD). By virtue of an Al0.66In0.34As0.85Sb0.15 Schottky layer and an inverted δ-doped carrier supplier, a gate-to-drain breakdown voltage as high as 40 V can be obtained. Moreover, the temperature dependence of breakdown voltage shows a negative temperature coefficient.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
