High-yield synthesis of silicon nanoparticles via the perpendicular pulsed laser ablation in the inert gas

Abstract

Si nanoparticles are synthesized at a high rate (400–500 mg/h) using the perpendicular pulsed laser ablation (PPLA) on the silicon target at room temperature in Ar atmosphere. The PPLA method can also be used to obtain Si nanocrystal films with large areas on the glass substrate. These particles are etched with a mixture of hydrofluoric acid (HF) and nitric acid (HNO3) to reduce their sizes and the surfaces of these particles are passivated by the high-pressure water vapor annealing (HWA). After treating the particles exhibit blue emission (with maximum photoluminescence (PL) intensity at 404 nm) at room temperature.