Abstract

The yield and morphology (length, width, thickness) of stoichiometric Bi2Se3 nanoribbons grown by physical vapor deposition is studied as a function of the diameters and areal number density of the Au catalyst nanoparticles of mean diameters 8–150 nm formed by dewetting Au layers of thicknesses 1.5–16 nm. The highest yield of the Bi2Se3 nanoribbons is reached when synthesized on dewetted 3 nm thick Au layer (mean diameter of Au nanoparticles ~10 nm) and exceeds the nanoribbon yield obtained in catalyst-free synthesis by almost 50 times. The mean lengths and thicknesses of the Bi2Se3 nanoribbons are directly proportional to the mean diameters of Au catalyst nanoparticles. In contrast, the mean widths of the Bi2Se3 nanoribbons do not show a direct correlation with the Au nanoparticle size as they depend on the contribution ratio of two main growth mechanisms—catalyst-free and vapor–liquid–solid deposition. The Bi2Se3 nanoribbon growth mechanisms in relation to the Au catalyst nanoparticle size and areal number density are discussed. Determined charge transport characteristics confirm the high quality of the synthesized Bi2Se3 nanoribbons, which, together with the high yield and tunable morphology, makes these suitable for application in a variety of nanoscale devices.

Highlights

  • Bismuth Selenide (Bi2 Se3 ) is a layered narrow bandgap semiconductor, which has been widely studied and demonstrated potential for application in optical recording systems [1], photochemical devices [2], battery electrodes [3], and thermoelectric devices [4]

  • The initial Au layer thickness impacts the size and number density of Au nanoparticles and, the yield of synthesized Bi2 Se3 nanoribbons—the highest nanoribbon number density is achieved at an initial Au layer thickness of 3 nm

  • There are more tilted Bi2 Se3 nanostructures synthesized on dewetted Au, compared to catalyst-free syntheses

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Summary

Introduction

Bismuth Selenide (Bi2 Se3 ) is a layered narrow bandgap semiconductor, which has been widely studied and demonstrated potential for application in optical recording systems [1], photochemical devices [2], battery electrodes [3], and thermoelectric devices [4]. This material belongs to the recently discovered class of three-dimensional topological insulators (TI), exhibiting conducting states with nondegenerate spins protected by time-reversal symmetry [5]. The surface-to-volume ratio has been shown to play an important role in tuning thermoelectric properties [14]

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