Abstract
Wide bandgap semiconductors, such as 4H SiC, are suitable for power regulating devices, due to compatibility with conventional process integration, high breakdown voltage and thermal conductivity [1]. For RF applications, in order to achieve better switching speed, high cut off frequency, and low series resistance (Rdson), it is essential to choose the right gate metals [2]. Engineering of the gate metals not only improves the critical device parameters by adjustment of the metal workfunction, but also affects how the high aspect ratio trenches are filled for a next generation SIT device configuration [3] - [5].
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