Abstract
The BV CB0 leakage current h FE were studied for high-voltage planar transistors which had three kinds of passivation films; SiO 2 -semi-insulating polycrystalline silicon (SIPOS)-SiO 2 ; SIPOS-SiO 2 ; and SiO 2 -phosphosilicate glass (PSG)-SiO 2 . The SiO 2 -SIPOS-SiO 2 type had a lower leakage current (surface generation current) and higher h FE than the conventional SIPOS-SiO 2 type. The SiO 2 -SIPOS-SiO 2 type also had the highest BV CB0 due to the field-plate effect.
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