Abstract
Steady large photo-emf's proportional to length and remanent polarization were observed in the ceramic materials: BaTiO 3 + 5 wt% CaTiO 3, Pb(Zr 0.53, Ti 0.47)O 3 with 1 wt% Nb, and hot pressed Pb(Zr 0.65, Ti 0.35)O 3 with 7 and 8% lanthanum for lead substitutions. Photo-emf's are also dependent on material, grain size, and temperature. The large photo-emf's are shown to result from the addition of small emf's across individual ceramic grains. The smaller emf's are shown to be related to the spontaneous polarization of these grains. Short-circuit photocurrents were also observed as a function of intensity, temperature and illumination wavelength. The photocurrent vs photo-emf characteristics are shown to be approximated by an equivalent circuit consisting of a photo-emf in series with a photoresistance. The highest photo-emf 1500 V/cm was observed in Pb(Zr 0.65Ti 0.35)O 3 ceramic wafers with 2–4 μm grains. Largest short-circuit photocurrents, 0.31 μA/cm/W/cm 2, are observed in Pb(Zr 0.53Ti 0.47)O 3 + 1 wt% Nb wafers, illuminated by band-gap light. In this last material, 0.02% of incident band-gap light is converted into electrical energy within a short-circuited sample.
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