High-Voltage LDMOS Transistors on an SOI Structure for Electronics That Operate in Extreme Conditions

Abstract

The parameters of high-voltage LDMOS transistors on a silicon structure on an insulator formed in a technological cycle combined with the manufacturing technology of low-voltage CMOS LSI are investigated. LDMOS transistors are studied under conditions of the temperature changing in the range –60 to 300°C and exposure to ionizing radiation.