Abstract
A new structure of high-voltage junction FET was designed by using a 40V LDMOS technology without additional mask in this process. This JFET also has the same breakdown capability as the LDMOSFET. The pinch-off voltage of the JFET was determined by layout, the n-well opening. The pinch-off voltage was almost unchanged with temperature variation. This JFET can be used in circuit applications with varying JFET pinch-off voltages.
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