Abstract
Au/6H-SiC Schottky barrier diodes with high blocking voltages were fabricated using layers grown by step-controlled epitaxy. A breakdown voltage of over 1100 V was achieved for silicon carbide (SIC) Schottky barrier diodes. These high-voltage SIC rectifiers had specific on-resistances lower than the theoretical limits of Si rectifiers by more than one order of magnitude. The specific on-resistance increased with temperature according to a T/sup 2.0/ dependence. The diodes showed good characteristics at temperatures as high as 400 degrees C. >
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