Abstract
Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V/sub RB/) up to 550 and >2000 V, respectively, have been fabricated. The on-state resistance, R/sub ON/, was 6 m/spl Omega//spl middot/cm/sup 2/ and 0.8 /spl Omega/ cm/sup 2/, respectively, producing figure-of-merit values for (V/sub RB/)/sup 2//R/sub ON/ in the range 5-48 MW/spl middot/cm/sup -2/. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5 V for the 550 V diodes and /spl ges/15 for the 2 kV diodes. Reverse recovery times were <0.2 /spl mu/s for devices switched from a forward current density of /spl sim/500 A/spl middot/cm/sup -2/ to a reverse bias of 100 V.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
