Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates

Abstract

The performance of Schottky rectifiers fabricated with dielectric overlap edge termination on epitaxial layers grown on a free-standing GaN template is reported. The power figure-of-merit (VB)2/RON where VB is the reverse breakdown voltage and RON is the on-state resistance was 11.5 MW cm−2. The forward turn-on voltage was ∼3.5 V at 25 °C, with an on-state resistance of ∼5×10−3 Ω cm2. The reverse recovery time was ⩽50 ns in switching from forward bias to reverse bias. The reverse breakdown showed a temperature coefficient of −0.45 V/C.