Abstract
Two high voltage gain quasi-switched boost inverters (HG-qSBIs) are introduced in this paper. The proposed HG-qSBIs has the following characteristics: 1) continuous input current with low ripple; 2) reduced voltage stress on the capacitor, switch, and diodes; 3) shoot-through immunity; 4) achieved high voltage gain with single-stage conversion; and 5) improve the output voltage capability with using high modulation index. A novel pulse-width modulationcontrol technique is proposed for the introduced HG-qSBI. Operating principle, circuit analysis, and passive component design guideline of the HG-qSBI are addressed. Comparison analysis between the introduced HG-qSBI and other Z-source-based high voltage gain inverters is presented. A prototype is made to test the introduced HG-qSBI. Simulation and experimental verifications are shown to prove the accuracy of the theoretical analysis.
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