High voltage carrier stored trench bipolar transistor with common anode polysilicon diodes gate structure for low Miller capacitance and low electromagnetic interference noise

Abstract

A novel 3300 V high voltage carrier stored trench bipolar transistor (CSTBT) with common anode polysilicon diodes gate structure (CAPD-CSTBT) is proposed. The PN junctions and N+ emitter region in the polysilicon gate structure are beneficial for reducing the Miller capacitance by 88.1% and the input capacitance by 26.0%, while due to the polysilicon PN junction barrier, the forward and reverse gate bias voltage will not be affected. As a result, the transient energy loss could be decreased by 32.2% with the same range of R g. Since the displacement current is shielded by the embedded emitter on the bottom of the CAPD gate structure, the (dI CE /dt)max/I Load is lower than that of the Fin-P-CSTBT by 81.8% on average with the same range of turn-on energy loss. Furthermore, the proposed structure features a 58.7% lower (dV KA /dt)max/V cc value for the free-wheeling diode on average. By Fourier transformation, the proposed structure represents lower amplitudes for the I CE and V KA spectrums during the turn-on period, which is a drastic suppression of electromagnetic interference noise.