High-Vacuum Particulate-Free Deposition of Wafer-Scale Mono-, Bi-, and Trilayer Molybdenum Disulfide with Superior Transport Properties.

Abstract

Wafer-scale MoS2 growth at arbitrary integer layer number is demonstrated by a technique based on the decomposition of carbon disulfide on a hot molybdenum filament, which yields volatile MoS x precursors that precipitate onto a heated wafer substrate. Colorimetric control of the growth process allows precise targeting of any integer layer number. The method is inherently free of particulate contamination, uses inexpensive reactants without the pyrophoricity common to metal-organic precursors, and does not rely on particular gas-flow profiles. Raman mapping and photoluminescence mapping, as well as imaging by electron microscopy, confirm the layer homogeneity and crystalline quality of the resultant material. Electrical characterization revealed microampere output current, outstanding device-to-device consistency, and exceptionally low noise level unparalleled even by the exfoliated material, while other transport properties are obscured by high-resistance contacts typical to MoS2 devices.