Abstract
A high-quality AlGaN/InGaN heterostructure is grown by pulsed metal organic chemical vapor deposition on a sapphire substrate. A two-step AlN interlayer is adopted to improve the interface morphology and protect the high-quality InGaN channel. Temperature-dependent Hall measurement shows superior transport properties compared with the traditional GaN channel heterostructure at elevated temperatures. Further, a record highest channel electron mobility of 1681 cm2/(V·s) at room temperature for an InGaN channel heterostructure is obtained. We attribute the excellent transport properties to the improvement in the material quality, as well as the rationally designed epitaxial structure and well-controlled growth condition.
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