High UV/visible rejection contrast AlGaN/GaN MIS photodetectors

Abstract

GaN-based metal-insulator-semiconductor (MIS) AlGaN/GaN ultraviolet (UV) photodetectors with photo-chemical vapor deposition (Photo-CVD) SiO 2 insulator and AR-coating layer were fabricated. It was found that with a 5 V applied bias, photocurrent to dark current contrast ratio was 1.27 × 10 4 for the MIS photodetector with AR-coating. It was also found that UV-to-visible rejection ratio of such MIS photodetector with AR-coating was more than 3 orders of magnitude while the responsivity was 0.144 A/W with a 5 V applied bias and a 350 nm incident light wavelength.