Abstract
This study investigates the resistive switching behavior of Pt, Al, and Cr electrodes for ZnO-based resistance random access memory. Results show that the existence of oxygen ions in the electrode plays an important role in the resistive switching behavior during filament reduction and oxidization. The Cr/ZnO/Pt structure exhibited a significant improvement in resistive switching parameters such as operation voltages and resistance states. This is most likely due to the partial formation of oxidation layers, namely CrOx at the Cr/ZnO interface. These layers act as oxygen reservoir or oxygen supplier, and improve the efficiency of oxygen ion exchange near the electrode/oxide interface.
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