Abstract
We have fabricated fully epitaxial magnetic tunnel junctions (MTJs) using a Co-based full-Heusler alloy Co/sub 2/Cr/sub 0.6/Fe/sub 0.4/Al (CCFA) thin film and an MgO tunnel barrier. The CCFA thin film for the lower ferromagnetic electrode was deposited by magnetron sputtering on an MgO-buffered MgO single-crystal substrate, and the MgO tunnel barrier was formed by electron beam evaporation. The microfabricated epitaxial CCFA/MgO/CoFe MTJs showed high tunnel magnetoresistance ratios of 42% at room temperature and 74% at 55K.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
