Abstract
It has been found that preferential sputtering of P from InP(110) is pronounced at low Ar ion energies (500 eV) but that for higher ion energies (ca 3 keV) no departure from the stoichiometric surface composition is observed. Annealing of the disordered surface produced by bombardment causes agglomeration of In atoms into microdroplets accompanied by a reordering of the remaining surface regions which, after the loss of In to the droplets, have a near stoichiometric composition. Reordering involves the formation of randomly oriented crystallites which at higher temperatures align with the underlying InP crystal structure to form flat ordered surface regions. These regions give rise to LEED and RHEED patterns essentially similar to those from the (110) cleavage surface despite the non-stoichiometric large-area composition.
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