High-Throughput Electrical Characterization of Nanomaterials from Room to Cryogenic Temperatures.

L W Smith ,Hannah J Joyce,Martin D Dawson,Chennupati Jagadish,Dimitars Jevtics,Joshua Robertson,Antonio Hurtado,Stephan Hofmann,Ye Fan,Tse-Ming Chen,Jack A Alexander-Webber,David A Ritchie,Michael J Strain,Harvey E Beere,Yi-Chih Hsieh ,Jonathan Griffiths ,Michael J Kelly ,Benoit Guilhabert ,Oliver J Burton ,J Batey ,Shin-Jr Fung ,C G Smith

doi:10.1021/acsnano.0c05622

Abstract

We present multiplexer methodology and hardware for nanoelectronic device characterization. This high-throughput and scalable approach to testing large arrays of nanodevices operates from room temperature to milli-Kelvin temperatures and is universally compatible with different materials and integration techniques. We demonstrate the applicability of our approach on two archetypal nanomaterials-graphene and semiconductor nanowires-integrated with a GaAs-based multiplexer using wet or dry transfer methods. A graphene film grown by chemical vapor deposition is transferred and patterned into an array of individual devices, achieving 94% yield. Device performance is evaluated using data fitting methods to obtain electrical transport metrics, showing mobilities comparable to nonmultiplexed devices fabricated on oxide substrates using wet transfer techniques. Separate arrays of indium-arsenide nanowires and micromechanically exfoliated monolayer graphene flakes are transferred using pick-and-place techniques. For the nanowire array mean values for mobility μFE = 880/3180 cm2 V-1 s-1 (lower/upper bound), subthreshold swing 430 mV dec-1, and on/off ratio 3.1 decades are extracted, similar to nonmultiplexed devices. In another array, eight mechanically exfoliated graphene flakes are transferred using techniques compatible with fabrication of two-dimensional superlattices, with 75% yield. Our results are a proof-of-concept demonstration of a versatile platform for scalable fabrication and cryogenic characterization of nanomaterial device arrays, which is compatible with a broad range of nanomaterials, transfer techniques, and device integration strategies from the forefront of quantum technology research.

Highlights

We present multiplexer methodology and hardware for nanoelectronic device characterization
The variability of nanoscale electronic device performance is a significant issue for the fabrication of complex circuit designs, those that rely on quantum phenomenon and require mounting and cooling in cryogenic systems
We study arrays of devices from graphene grown by chemical vapor deposition (CVD), mechanically exfoliated graphene devices, and InAs nanowire devices

Summary

Introduction

We present multiplexer methodology and hardware for nanoelectronic device characterization This high-throughput and scalable approach to testing large arrays of nanodevices operates from room temperature to milli-Kelvin temperatures and is universally compatible with different materials and integration techniques. For the nanowire array mean values for mobility μFE = 880/3180 cm[2] V−1 s−1 (lower/upper bound), subthreshold swing 430 mV dec−1, and on/off ratio 3.1 decades are extracted, similar to nonmultiplexed devices In another array, eight mechanically exfoliated graphene flakes are transferred using techniques compatible with fabrication of two-dimensional superlattices, with 75% yield. Multiple repetitions must be fabricated and measured to find working examples This is time-consuming, and samples cannot be later integrated into circuit designs if they perform well. The multiplexer will enable studies such as investigating the role of damage/disorder and modification of device properties[11,12] by varying the amount of irradiation across the array, for example using a focused ion beam, or comparing ensemble averaging with single-device averaging techniques used to study phase coherent properties in 2D graphene,[13,14] graphene nanoribbons,[15] and nanowires.[16−20]

Methods

Results

Conclusion