Abstract
A high TOI C-band MMIC amplifier has been developed using Cobham's multifunction self-aligned gate MESFET technology. The medium-power amplifier demonstrated 48-dBm OTOI, greater than 0.6 W saturated power, and 45% PAE performance. This outstanding TOI performance was only possible because of the SF configuration. The amplifier has approximately 3-dB higher gain than a single FET, which also results in higher PAE.
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