Abstract
This paper describes a new 19.2mm GaAs PHEMT chip with high gain, high power and high power-added efficiency. Devices which are packaged by internal-matching use one such FET that has been developed at 16-16.5GHz. At 16.5GHz, the device has achieved power, gain, and power-added efficiency of 39.1dBm, 6.1dB and 26.1% respectively at the 1dB gain compression point. It is first reported that high gain, PAE and output power combination have achieved by a single FET power amplifier at such high frequency
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