Abstract
B-doped (p-type) and P-doped (n-type) Ge 0.07 Si 0.93 single crystals were prepared by a Czochralski (CZ) method. The anisotropy of Seebeck coefficient (a), electrical conductivity (σ) and thermal conductivity (κ) among the [001], [110] and [111] directions was determined and the values were compared with those of polycrystalline materials. The Seebeck coefficient of B-doped specimen in the [111] direction (α 111 ) was the same as that in the [110] direction (α 110 ), and was greater than that in the [001] direction (α 001 ) measured at all temperature. The α 111 , α 110 and α 100 of the P-doped specimens were in agreement above 600 K, but anisotropy of a values was observed below 500 K, (|α 001 I > |α 1 11 | > |α 110 |). No anisotropy of σ and K was observed in both B- and P-doped specimens. The thermal conductivity of B- and P-doped single crystal specimens were much greater than that of polycrystalline materials.
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