Abstract
We present the results of the investigations of high conducting area and superconductivity at the interfaces between ferroelectric oxide and insulating oxide in heterostructures, isostructural to BaTiO3/La2CuO4. The performed numerical simulations of BaTiO3/La2CuO4 heterostructure show the possibility of high conductivity state at the interface. The temperature dependence of the measured electrical resistance of the Ba0.8Sr0.2TiO3/La2CuO4 heterostructure interface have been studied and the superconducting behaviour with transition temperature Tc about 30K has been found. Therefore, the transition to the state with 2DEG at the interface is demonstrated. The results offer the possibility to design novel electronic devices.
Highlights
We report the tailoring quasi-two-dimensional electron gas (q2DEG) state as well as a high-TC quasi-two-dimensional superconductivity (HTq2DSC) in heterostructure Ba0.8Sr0.2TiO3/La2CuO4 consisting of an insulating ferroelectric film deposited by magnetron sputtering on a non-atomically-flat surface of an insulator single crystal
That the temperature dependence of the electrical resistance for heterostructure formed by antiferromagnetic La2CuO4 (LCO) single crystals with epitaxial films of ferroelectric Ba0.8Sr0.2TiO3 (BSTO) deposited onto them has been studied
The measured electrical resistance is compared to that exhibited by LCO single crystals without the films
Summary
We report the tailoring quasi-two-dimensional electron gas (q2DEG) state as well as a high-TC quasi-two-dimensional superconductivity (HTq2DSC) in heterostructure Ba0.8Sr0.2TiO3/La2CuO4 consisting of an insulating ferroelectric film deposited by magnetron sputtering on a non-atomically-flat surface of an insulator single crystal. That the temperature dependence of the electrical resistance for heterostructure formed by antiferromagnetic La2CuO4 (LCO) single crystals with epitaxial films of ferroelectric Ba0.8Sr0.2TiO3 (BSTO) deposited onto them has been studied.
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