High-Temperature RF Probe Station for Device Characterization Through 500<tex>$^circ$</tex>C and 50 GHz

Abstract

A high-temperature measurement system capable of performing on-wafer microwave testing of semiconductor devices has been developed. This high-temperature probe station can characterize active and passive devices and circuits at temperatures ranging from room temperature to above 500/spl deg/C. The heating system uses a ceramic heater mounted on an insulating block of NASA Shuttle tile. The temperature is adjusted by a graphical computer interface and is controlled by the software-based feedback loop. The system is used with a vector network analyzer to measure scattering parameters over a frequency range from 1 to 50 GHz. The microwave probes, cables, and inspection microscope are all shielded to protect from heat damage. The high-temperature probe station has been successfully used to characterize gold transmission lines on silicon carbide at temperatures up to 540/spl deg/C.