Abstract
Reliability characteristics play a critical role in studied of SiC MOSFETs, including gate oxygen, long-term and short circuit reliability. This article presents a long-term reliability and device high temperature performance. Firstly, the static performance evaluation of the device at high temperature is introduced. Next, the gate bias test induces the threshold voltage shift, arguing that the instability is due to the capture of electrons by the SiC/SiO2 interface traps and the gate dielectric near-interface traps. Finally, the reliability characterization is verified using the common methods of high temperature reverse bias and high temperature gate bias tests. The results exhibit the superior reliability and performance of 1200 V SiC MOSFETs.
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