Abstract

Digital electronics in SiC find use in high-temperature applications. The objective of this study was to fabricate SiC CMOS without using ion implantation. In this letter, we present a recessed channel CMOS process. Selective doping is achieved by etching epitaxial layers into mesas. A deposited SiO2-film, post-annealed at low temperature and re-oxidized in pyrogenic steam, is used as the gate oxide to produce a conformal gate oxide over the non-planar topography. PMOS, NMOS, inverters, and ring oscillators are characterized at 200 °C. The PMOS requires reduced threshold voltage in order to enable long-term reliability. This result demonstrates that it is possible to fabricate SiC CMOS without ion implantation and by low-temperature processing.

Highlights

  • S EVERAL different transistor and circuit technologies have been demonstrated in silicon carbide (4H-SiC) technology

  • The bipolar junction transistor (BJT) technology have been demonstrated for use in emitter-coupled logic (ECL) [3], [4] and transistor-transistor logic (TTL) [5], [6]

  • We present the first results of our SiC complementary MOSFET (CMOS) process, which is the first time demonstration of a recessed channel SiC CMOS process that does not require ion implantation

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Summary

Introduction

S EVERAL different transistor and circuit technologies have been demonstrated in silicon carbide (4H-SiC) technology. The fieldeffect transistors (FETs) include impressive results in the use of metal-semiconductor FETs (MESFETs) [7], [8], junction FETs (JFETs) [9]–[11] and metal oxide semiconductor FETs (MOSFETs) [12]–[15]. Of these transistors and circuit families, the static complementary MOSFET (CMOS) circuit family offers high input impedance, high fan-out, rail-to-rail swing output, low static power consumption, dense and simple digital circuit design and compatibility with all state-of-theart memory technologies. SiC CMOS together with integrated ferroelectric memory devices [16], [17] could give non-volatile memory operational at high temperatures

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