Abstract

There are a number of processing steps in which the In-based III–V semiconductors must be heated to temperatures in excess of their incongruent evaporation point. These include implant activation annealing, in situ heating for surface cleaning or contact sintering and growth of epitaxial layers, although in this latter case an overpressure of P, As or Sb vapor should be present. While much attention has been focused on surface preservation during implant activation annealing, there has been less effort on characterizing the surface after other heating steps. In this paper, we will detail some of the characteristics associated with high temperature heating of InP and related compounds.

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