Abstract
High-temperature (673–1173 K) electrical property ( σ, R H) measurements in undoped and In-doped (up to 1×10 20 at/cm 3) CdTe were performed under different stoichiometric conditions. Cadmium (tellurium) vapor pressure or temperature electron (hole) density dependences were obtained. The results are described by a computed defect structure model, which optimizes the defect reaction constants. A new In incorporation defect reaction is proposed, explaining the dopant self-compensation mechanism.
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