Abstract
High-temperature (973–1173 K) electrical properties (σ, R H) measurements in heavily (up to 1.5 × 10 19at/cm 3) In-doped CdTe were performed under Cd saturation conditions in order to gain a better understanding of possible occurring compensation (self-compensation) processes. At high In concentrations, exceeding 4 × 10 18at/cm 3, the absence of electron concentration dependence on In content was observed. These data are interpreted in terms of a self-compensation hypothesis involving an (In + CdV 2− Cd) − associate, although the nature of the compensating dopant-including defect can differ. Corresponding approximation diagrams are proposed.
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