Abstract
WSi x gate pseudomorphic GaInP In 0.2Ga 0.8As HEMTs were fabricated, and evaluated for the purposes of high temperature operations. Based on the high thermal stability of WSi x gates, no significant change in device characteristics was observed for temperatures up to 200°C. Functional devices can still be obtained at 300°C. Comparing with the other gate materials, for example Ti Au or Al gates, WSi x demonstrates the advantages of this highly thermal stable property.
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