High temperature operation of logic AND gate based on diamond Schottky diodes fabricated by selective growth method

Abstract

The drastic miniaturization of high-frequency electronic devices has led to a dramatic increase in the local operating temperatures of individual components. Diamond microprocessors and logic chips are expected to operate under high-temperature and high-radiation environments. A logic gate circuit, based primarily on the use of diodes, constitutes the building block in the fabrication process of these chips. In this study, diamond Schottky diodes were fabricated by a selective growth method using a noble metal (Ti/Ru) mask. The rectification ratio of the Schottky device was as high as 7 × 109 at 633 K, indicating a good high-temperature performance. Various methods have been used to extract the parameters of Schottky diodes, and the applicability of these methods has been compared. A stable logic AND gate circuit, operating at 633 K, was achieved using these Schottky diodes, implying their great potential for implementation in chips working under high-temperature conditions.