Abstract
The stabilization by vacuum annealing of tungsten carbide/p-diamond Schottky barrier diodes (SBDs) has been investigated. The Schottky barrier height (ϕB) and ideality factor (n), at high temperature, were consistently estimated by employing a vertical SBD structure. An exponential drop of ϕB in time at 600 K and its stabilization at 1.46 eV after 90 min were reported. The lowest n among SBDs examined was close to 1.0 at 600 K. A linear relation between ϕB and n in a statistical electrical characterization suggests a ϕB inhomogeneity.
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