Abstract
We report the 250 °C operation of a diamond-based monolithic bidirectional switch. A normally-ON double gate deep depletion MOSFET was fabricated with a 400 nm p-type channel with a boron doping of [NA-ND] = 2.3 × 1017 cm−3 and an Al2O3 gate oxide thickness of 50 nm. The Ist and IIIrd quadrants transistor characteristics are successfully measured by controlling the channel conductivity with both gates separately, with a clear ON and OFF state. A threshold voltage around 35 V is obtained with a low minimum gate leakage current of 1.00 × 10−4 mA/mm at a gate-source bias VGS = 50 V. The bidirectional switch is then obtained by operating the MOSFET in the Ist quadrant of each gate setup. This first proof of concept offers a reverse conducting and reverse blocking diamond MOSFET, with only one drift region layer.
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