Abstract
The monolithic bidirectional switch (MBS) is a device concept that promises to take advantage of materials characteristics up to their very limit. Up to now no real devices have been produced but their expected characteristics can be realistically investigated by computer simulations. As a bidirectional switch the MBS can replace an IGBT and its antiparallel diode in an inverter circuit simultaneously. While up to now the switch function was investigated mainly, the paper discusses the characteristics of an MBS in the diode function. To this goal a device exhibiting a breakdown voltage of 1600 V inserted in a typical inverter circuit is considered. In the diode operation the MBS can be discharged before the proper commutation of the current. This allows dramatically improved reverse recovery characteristics. It is revealed that total losses similar to those of SiC-Schottky diodes can be achieved.
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