High temperature operation of λ = 1.5 μm tensile strained multiple quantum well sipbh lasers

Abstract

The high temperature operation of 1.5 μm wavelength, strained-layer multiple quantum well, semi-insulating planar buried heterostructure lasers is reported. The lasers, which are grown by low-pressure organometallic vapour phase epitaxy and which have four 1.6% tensile strained In0.3Ga0.7As wells (thickness 8 nm), operate in CW mode up to heatsink temperatures of 140°C. The CW output power at 100°C is 26 mW per facet. These results are a marked improvement when compared to data reported thus far for 1.5 μm wavelength lasers.