Abstract
In the conventional SiC-MOSFET, a PN junction diode is included between the source and drain. This P-N junction diode not only causes device degradation, but also generates a large reverse recovery surge voltage during high temperature operation. This surge voltage increases the electrical stress of the power converter, causing dielectric breakdown and control malfunction. We have developed a SBD integrated SiC-MOSFET. This MOSFET reduces the occurrence of reverse recovery surge voltage during high-temperature operation caused by inactivating the included PN junction diode. In this paper, we discuss the characteristics of the inverter composed of the developed SiC-MOSFET in high-temperature operation. As a result, the inverter using a SBD integrated SiC-MOSFET with the PN junction diode deactivated was able to reduce surge voltage at high temperature operation.
Published Version
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