Abstract
Bi-directional power switch architectures are emerging as a key enabler of advanced integration and enhanced functionality options in modern motor-drive concepts targeting the development of more efficient, power dense and reliable solutions in energy-strategic applications ranging from transportation to air-conditioning, sewage and industrial. Specifically, wide-band-gap semiconductor based highly integrated solutions capable of withstanding high operational temperatures are required. Whereas with GaN, lateral devices, monolithic integration efforts are being pursued, the vertical structure of SiC transistors requires the development of bespoke packaging. This paper presents such a solution, based on the use of power overlay technology to yield a 200 °C validated power switch.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
