Abstract
Bi-directional power switch architectures are emerging as a key enabler of advanced integration and enhanced functionality options in modern motor-drive concepts targeting the development of more efficient, power dense and reliable solutions in energy-strategic applications ranging from transportation to air-conditioning, sewage and industrial. Specifically, wide-band-gap semiconductor based highly integrated solutions capable of withstanding high operational temperatures are required. Whereas with GaN, lateral devices, monolithic integration efforts are being pursued, the vertical structure of SiC transistors requires the development of bespoke packaging. This paper presents such a solution, based on the use of power overlay technology to yield a 200 °C validated power switch.
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