Abstract
The role of irradiation temperature on implant distributions was investigated in the Au-Ni system. Gold ions were implanted at 300 keV into polycrystalline nickel samples at temperatures between 25 and 700 °C to a dose of 10 16 cm -2. The spatial gold distributions were analyzed with Rutherford backscattering spectrometry, using both 1.7 and 3.0 MeV 4He, and secondary ion mass spectrometry. The results showed that the gold profiles were practically insensitive to target temperature below about 200 °C. At higher temperatures, systematic decreases in the surface and peak concentrations and longer penetration tails were observed. The evolution of the implant distribution in time and space during implantation was also calculated theoretically by means of a comprehensive kinetic model. In general, the effects observed experimentally can be reproduced theoretically, and interpreted in terms of substantial sputtering at low temperatures, and dominant radiation-induced segregation at higher temperatures. In addition, a systematic fitting of model calculations to experimental measurements allowed the determination of various defect parameters.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
